DOI: http://dx.doi.org/10.18257/raccefyn.516
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Propiedades electrónicas y estructurales del Ga1-xCrxAs
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Ahmed, R., Hashemifar, S. J., Akbarzadeh, H., Ahmed, M. & e Aleem, F. (2007). Ab initio study of structural and electronic properties of iii-arsenide binary compounds. Elsevier ScienceDircet.Computational Materials Science 39, 580586.
Baykov, V. I., Korzhavyi, P. A., Smirnova, E. A., Abrikosov, I. A. & Johansson, B. (2007). Magnetic properties of 3d impurities in gaas. Journal of Magnetism and Magnetic Materials 310 (3):2120-2122.
De-min Ma, V. W. E.-l. L., Yong-yong Chai & Shi, W. (2016). Electornic structure, magnetic and optical properties of crdoped GaAs using hybrid density functional. omputational Materials Science 113: 75-79.
Fillipi, B., Singh, D. & Umrigar, C. (1994). Phys. Rev. B 50: 14947.
Giannozzi, P., Baroni, S., Bonini, N., Calandra, M., Car, R., Cavazzoni, C., Ceresoli, D., Chiarotti, G. L., Cococcioni, M., Dabo, I., Corso, A. D., de Gironcoli, S., Fabris, S., Fratesi, G., Gebauer, R., Gerstmann, U., Gougoussis, C., Kokalj, A., Lazzeri, M., Martin-Samos, L., Marzari, N., en Francesco Mauri, Mazzarello, R., Paolini, S., Pasquarello, A., Paulatto, L., Sbraccia, C., Scandolo, S., Sclauzero, G., Seitsonen, A. P., Smogunov, A., Umari, P. & Wentzcovitch, R. M. (2009). Quantum espresso: a modular and open-source software project for quantum simulations of materials. Journal of Physics: Condensed Matter 39, 395502, 19pp.
Grivickas, P., McCluskey, M. D. & Gupta, Y. M. (2009). Transformation of GaAs into an indirect l-band-gap semiconductor under uniaxial strain. Physical Review B 80.
He, L. & HaiMing, D. (2008). Local electronic structure and magnetic properties of 3d transition metal doped GaAs. Sci China Ser G-Phys Mech Astron. 51 (5): 470-480.
Hellwege, K., Madelung, O. & Börnstein, L. (1982). New Series Group III, vol 17a.
Ihm, J. & Joannopoulus, J. D. (1981). Ground-state properties of gaas and alas. Physical Review B. 24 (8).
J.P.Perdew, K.Burke & Emzerhof, M. (1996). Phys Rev. Lett 77: 3856.
R.A.Groot, F.M.Mueller, Engen, P. & Buschow, K. (1983). New class of materials: Half-metallic ferromagnets. Physical Review Letters 50 (25).
Sandratskii, L. M. & Bruno, P. (2003). Electronic structure, exchange interactions, and curie temperature in diluted III-V magnetic semiconductors: (GaCr)As, (GaMn)As, (GaFe)As. Physical Review B. 67: 214402.
Shirai, M. (2001). Electronic and magnetic properties of 3d transition-metal-doped gaas. Physica E. 10: 143-147.
Sze, S. M. & Ng, K. K. (2007). Physics of semiconductor devices. Third Edition. John Wiley and Sons.
Wang, C. S. & Klein, B. M. (1981). First principles electronic structure of Si, Ge, GaP, GaAs, ZnS and ZnSe. II optical porperties. Phys. Rev. B. 24 (6): 3417-3429.
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